Ultra-thin two-dimensional tin sulfide for broadband photodetectors
Researchers at the Royal Melbourne Institute of Technology in Australia have synthesized a series of monolayer and multilayer two-dimensional tin sulfide (SnS) with millimeter diameters using liquid metal tin over large areas.
The high carrier mobility and absorption coefficients of atomic-level thickness tin sulfide have the potential for a wide range of applications in electronics and optoelectronic devices. However, the strong interlayer interactions make large-area synthesis challenging, leading to limited practical applications. The researchers first surface sulfide molten metal tin at 350°C in a hydrogen sulfide atmosphere; then peel off the thin layer of tin sulfide formed on the top surface of molten tin using the van der Waals imprint transfer technique to obtain millimeter-scale single- or multilayer two-dimensional tin sulfide; and subsequently transfer it to silicon, glass, and other substrates. It was found that the non-polarizing property makes no macroscopic force between molten tin and its sulfide surface, which can realize the complete separation of 2D tin sulfide. Using sub-nanometer 2D tin sulfide as raw material, photodetector devices were prepared by photolithography, which exhibited spectral response properties in the deep UV to near IR range (280~850 nm) with a spectral responsiveness of 927 A/W, three orders of magnitude higher than commercial photodetectors.
This research provides a new method for preparing large-size two-dimensional materials, which will promote the development of high-performance photodetectors and is important for the development of optoelectronic circuits, sensing and biomedical fields.
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